发明名称 |
DOUBLE-SIDED LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A double-sided light emitting diode structure and a manufacturing method thereof. With the help of an electroplating or electrocasting process, the light emitting diode structure is formed to be free from wire bonding and is also imparted with a double-sided light emitting characteristic; and due to the double-sided light emitting characteristic, the divergence angle of a chip can reach a light emitting angle of more than 150 degrees. Furthermore, the double-sided light emitting diode structure has outstanding light extracting and heat dissipating mechanisms.</p> |
申请公布号 |
WO2014139338(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
WO2014CN70979 |
申请日期 |
2014.01.21 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
HUANG, SHAOHUA;CHAO, CHIH-WEI |
分类号 |
H01L33/48 |
主分类号 |
H01L33/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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