发明名称 DOUBLE-SIDED LIGHT-EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 <p>A double-sided light emitting diode structure and a manufacturing method thereof. With the help of an electroplating or electrocasting process, the light emitting diode structure is formed to be free from wire bonding and is also imparted with a double-sided light emitting characteristic; and due to the double-sided light emitting characteristic, the divergence angle of a chip can reach a light emitting angle of more than 150 degrees. Furthermore, the double-sided light emitting diode structure has outstanding light extracting and heat dissipating mechanisms.</p>
申请公布号 WO2014139338(A1) 申请公布日期 2014.09.18
申请号 WO2014CN70979 申请日期 2014.01.21
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 HUANG, SHAOHUA;CHAO, CHIH-WEI
分类号 H01L33/48 主分类号 H01L33/48
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