MULTI-LAYER METAL CONTACS

摘要

A method for forming metal contacts within a semiconductor device includes a step of forming a first-layer contact in a first dielectric layer which surrounds at least one gate electrode, wherein the first-layer contact extends to a doped region of an underlying substrate. The method further includes the steps of: forming a second dielectric layer on the first dielectric layer; and forming a second-layer contact extended through the second dielectric layer to the first-layer contact.