Hydrogen Plasma Cleaning of Germanium Oxide Surfaces

摘要

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

主权项

1. A method for etching a layer, the method comprising:
providing a substrate, wherein the substrate comprises a semiconductor oxide layer formed thereon; exposing the semiconductor oxide layer to activated hydrogen species, wherein the activated hydrogen species are formed using a plasma source, and wherein the activated hydrogen species are operable to remove at least a portion of the semiconductor oxide layer.