发明名称 Program Method, Data Recovery Method, and Flash Memory Using the Same
摘要 A program method for a multi-level cell (MLC) flash memory is provided. The memory array includes a plurality of pages and a plurality of paired pages, which correspond to the respective pages. The program method includes the following steps. Firstly, a program address command is obtained. Next, whether the program address command corresponding to any one of the paired pages is determined. When the program address command corresponds to a first paired page, which corresponds to a first page among the pages, among the paired pages, data stored in the first page to a non-volatile memory are copied. After that, the first paired page is programmed.
申请公布号 US2014281175(A1) 申请公布日期 2014.09.18
申请号 US201414265400 申请日期 2014.04.30
申请人 Macronix International Co., Ltd. 发明人 Kuo Lung-Yi;Ho Hsin-Yi;Hung Chun-Hsiung;Hung Shuo-Nan;Chen Han-Sung
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. A program method for a non-volatile memory, the non-volatile memory comprising a memory array, the memory array comprising a plurality of first memory cells and a plurality of second memory cells, which respectively correspond to the first memory cells, the program method comprising: obtaining a program address command; determining whether the program address command corresponds to any one of the second memory cells; when the program address command corresponds to a target second memory cell, which corresponds to a target first memory cell among the first memory cells, among the second memory cell, copying data stored in the target first memory cell to a storage unit; and programming the target second memory cell after the data stored in the target first memory cell has been copied.
地址 Hsinchu TW
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