| 发明名称 |
Extreme Ultraviolet Lithography Process and Mask |
| 摘要 |
An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target. |
| 申请公布号 |
US2014272679(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313946533 |
申请日期 |
2013.07.19 |
| 申请人 |
Taiwan Semiconductor Manufacturing Companyu, Ltd. |
发明人 |
Lu Yen-Cheng;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 |
G03F1/22 |
主分类号 |
G03F1/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet lithography (EUVL) process, comprising:
receiving a mask, the mask including:
a low thermal expansion material (LTEM) substrate;a reflective multilayer (ML) over one surface of the LTEM substrate;a first region having a phase-shifting layer over the reflective ML; anda second region having no phase-shifting layer over the reflective ML. exposing the mask by a nearly on-axis illumination with partial coherence σ less than 0.3 to produce diffracted light and non-diffracted light; removing at least a portion of the non-diffracted light; and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target. |
| 地址 |
Hsin-Chu TW |
