| 发明名称 |
Structure and Method for Reflective-Type Mask |
| 摘要 |
The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout. |
| 申请公布号 |
US2014272678(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313944080 |
申请日期 |
2013.07.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Liu Wei-Hung;Chen Chia-Chen;Lu Chi-Lun;Yen Anthony |
| 分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A reflective mask, comprising:
a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout. |
| 地址 |
Hsin-Chu TW |
