SUPPORT STRUCTURE FOR INTEGRATED CIRCUITRY

摘要

Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.

主权项

1. A support structure for integrated circuitry, comprising:
a first trench structure formed within a substrate, the first trench structure comprising a fill material that is different than a material of the substrate; and a second trench structure formed within the substrate, the second trench structure comprising a second fill material, the second trench structure formed substantially adjacent to the first trench structure.