发明名称 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH
摘要 A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels.
申请公布号 US2014264684(A1) 申请公布日期 2014.09.18
申请号 US201414202307 申请日期 2014.03.10
申请人 Bhattacharya Rabi S.;Evans, JR. Howard Blane 发明人 Bhattacharya Rabi S.;Evans, JR. Howard Blane
分类号 H01L31/09;H01L31/0304 主分类号 H01L31/09
代理机构 代理人
主权项 1. A photoconductive semiconductor switch comprising a photoconductive substrate having a pair of spaced metal contacts on a surface thereof, the space between the metal contacts constituting a switching gap, the switching gap having a plurality of spaced lateral current flow preventing channels therein, the lateral current flow preventing channels being formed by ion implantation of the semiconductor substrate in the area of the lateral current flow preventing channels, the channels extending the distance from one spaced contact to the other; at least one conducting channel in the space between two of the spaced lateral flow preventing channels which conducts a current when the switch is irradiated with a proton source.
地址 Beavercreek OH US