发明名称 MULTI JUNCTIONS IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES
摘要 A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.
申请公布号 US2014261653(A1) 申请公布日期 2014.09.18
申请号 US201214350435 申请日期 2012.10.08
申请人 Soitec 发明人 Krause Rainer;Ghyselen Bruno
分类号 H01L31/18;H01L31/0725 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method of forming a plurality of pn junctions in a semiconductor device, the method comprising: performing a chemical vapor deposition process and forming a first crystalline semiconductor layer comprising a first pn junction of the semiconductor device; and performing a molecular beam epitaxy process and forming a diluted nitrogen semiconductor material as a second crystalline semiconductor layer comprising a second pn junction of the semiconductor device.
地址 Crolles Cedex FR