发明名称 |
MULTI JUNCTIONS IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES |
摘要 |
A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates. |
申请公布号 |
US2014261653(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201214350435 |
申请日期 |
2012.10.08 |
申请人 |
Soitec |
发明人 |
Krause Rainer;Ghyselen Bruno |
分类号 |
H01L31/18;H01L31/0725 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a plurality of pn junctions in a semiconductor device, the method comprising:
performing a chemical vapor deposition process and forming a first crystalline semiconductor layer comprising a first pn junction of the semiconductor device; and performing a molecular beam epitaxy process and forming a diluted nitrogen semiconductor material as a second crystalline semiconductor layer comprising a second pn junction of the semiconductor device. |
地址 |
Crolles Cedex FR |