NON-AMBIPOLAR ELECTRIC PRESSURE PLASMA UNIFORMITY CONTROL

摘要

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

主权项

1. An apparatus for treating a substrate, comprising:
a plasma processing chamber ; a substrate holder, disposed in the processing chamber, that can receive a substrate to be treated; a gas supply system for supplying a gas mixture to the processing chamber; a plasma source in the plasma processing chamber that can energize the gas mixture into a plasma; a ring-shaped cavity disposed in the side wall of the plasma processing chamber, above the substrate holder, the ring-shaped cavity being in fluid communication with the plasma processing chamber via a plurality of openings disposed in the sidewall, the ring-shaped cavity comprising an electrode; a DC power supply for biasing the electrode.