发明名称 TECHNIQUES TO MITIGATE STRAGGLE DAMAGE TO SENSITIVE STRUCTURES
摘要 A method for processing a substrate includes providing a set of patterned structures separated by a first gap on the substrate and directing first implanting ions to the substrate at a first ion energy, where the first implanting ions are effective to impact the substrate in regions defined by the first gap. The method also includes directing depositing ions to the substrate where the second ions are effective to deposit material on at least a portion of the set of patterned structures to form expanded patterned structures, where the expanded patterned structures are characterized by a second gap smaller than the first gap. The method further includes directing second implanting ions to the substrate at a second ion energy, where the second implanting ions effective to impact the substrate in regions defined by the second gap, the second ion energy comprising a higher ion energy than the first ion energy.
申请公布号 US2014273502(A1) 申请公布日期 2014.09.18
申请号 US201313799022 申请日期 2013.03.13
申请人 Equipment Associates, Inc. Varian Semiconductor 发明人 Hatem Christopher R.;Renau Anthony;Hautala John J.;Godet Ludovic
分类号 H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项 1. A method of processing a substrate comprising; providing a set of patterned structures separated by a first gap on the substrate; directing first implanting ions to the substrate at a first ion energy during a first exposure, the first implanting ions effective to impact the substrate in regions defined by the first gap; directing depositing ions to the substrate in a second exposure subsequent to the first ion exposure, the second ions effective to deposit material on at least a portion of the set of patterned structures to form expanded patterned structures, the expanded patterned structures characterized by a second gap smaller than the first gap; and directing second implanting ions to the substrate at a second ion energy during a third exposure subsequent to the second exposure, the second implanting ions effective to impact the substrate in regions defined by the second gap, the second ion energy comprising a higher ion energy than the first ion energy.
地址 US