ELECTRIC PRESSURE SYSTEMS FOR CONTROL OF PLASMA PROPERTIES AND UNIFORMITY

摘要

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

主权项

1. A method for treating a substrate, comprising:
loading a substrate onto a substrate holder disposed inside a plasma processing chamber, the plasma processing chamber being enclosed by at least one chamber wall and comprising a plasma source configured to energize a plasma inside the plasma processing chamber; forming a plasma region inside the plasma processing chamber using the plasma source, the plasma region comprising a bulk potential profile and ions; and applying a potential to an electrode assembly that is adjacent to or incorporated into the chamber wall to alter a rate of loss of ions from the plasma region to the chamber wall.