| 发明名称 |
PEALD of Films Comprising Silicon Nitride |
| 摘要 |
Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C. |
| 申请公布号 |
US2014273529(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414211024 |
申请日期 |
2014.03.14 |
| 申请人 |
Nguyen Victor;Lee Woong Jae;Balseanu Mihaela;Xia Li-Qun;Witty Derek R. |
发明人 |
Nguyen Victor;Lee Woong Jae;Balseanu Mihaela;Xia Li-Qun;Witty Derek R. |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C. |
| 地址 |
Novato CA US |
