| 发明名称 |
CARBON FILM HARDMASK STRESS REDUCTION BY HYDROGEN ION IMPLANTATION |
| 摘要 |
Methods for forming a hydrogen implanted amorphous carbon layer with desired film mechanical strength as well as optical film properties are provided. In one embodiment, a method of a hydrogen implanted amorphous carbon layer includes providing a substrate having a material layer disposed thereon, forming an amorphous carbon layer on the material layer, and ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer. |
| 申请公布号 |
US2014273461(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414201700 |
申请日期 |
2014.03.07 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEE Kwangduk Douglas;SEAMONS Martin Jay;SCOTNEY-CASTLE Matthew D.;HILKENE Martin A.;GODET Ludovic |
| 分类号 |
H01L21/314;H01L21/311 |
主分类号 |
H01L21/314 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a hydrogen implanted amorphous carbon layer, comprising:
(a) providing a substrate having a material layer disposed thereon; (b) forming an amorphous carbon layer on the material layer; and (c) ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer. |
| 地址 |
Santa Clara CA US |
