| 发明名称 |
APPARATUS AND METHOD FOR ION IMPLANTATION IN A MAGNETIC FIELD |
| 摘要 |
In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap. |
| 申请公布号 |
US2014272181(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313829755 |
申请日期 |
2013.03.14 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Kontos Alexander C.;Sinclair Frank;Dorai Rajesh |
| 分类号 |
G11B5/84 |
主分类号 |
G11B5/84 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A system for treating a substrate having a magnetic layer, comprising:
an ion generating apparatus for directing an ion beam to the substrate; and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate, the magnetic alignment apparatus and ion generating apparatus generating a process region in which the ion beam and magnetic field overlap. |
| 地址 |
Gloucester MA US |
