| 发明名称 |
BIPOLAR JUNCTION TRANSISTOR AND OPERATING AND MANUFACTURING METHOD FOR THE SAME |
| 摘要 |
A bipolar junction transistor and an operating method and a manufacturing method for the same are provided. The bipolar junction transistor comprises a first doped region, a second doped region and a third doped region. The first doped region has a first type conductivity. The second doped region comprises well regions formed in the first doped region, having a second type conductivity opposite to the first type conductivity, and separated from each other by the first doped region. The third doped region has the first type conductivity. The third doped region is formed in the well regions or in the first doped region between the well regions. |
| 申请公布号 |
US2014266407(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313868134 |
申请日期 |
2013.04.23 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Chen Li-Fan;Chan Wing-Chor;Gong Jeng |
| 分类号 |
H01L29/735;H01L29/66 |
主分类号 |
H01L29/735 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bipolar junction transistor, comprising:
a first doped region having a first type conductivity; a second doped region comprising well regions formed in the first doped region, having a second type conductivity opposite to the first type conductivity, and separated from each other by the first doped region; and a third doped region having the first type conductivity, formed in the well regions or in the first doped region between the well regions. |
| 地址 |
Hsinchu TW |
