| 发明名称 |
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY |
| 摘要 |
According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu. |
| 申请公布号 |
US2014264673(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414193340 |
申请日期 |
2014.02.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Kitagawa Eiji;Ochiai Takao;Yakushiji Kay;Konoto Makoto;Kubota Hitoshi;Yuasa Shinji;Nozaki Takayuki;Fukushima Akio |
| 分类号 |
H01L43/10 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive element comprising:
a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu. |
| 地址 |
Minato-ku JP |
