发明名称 |
SEMICONDUCTOR OPTICAL AMPLIFIER, SEMICONDUCTOR LASER DEVICE ASSEMBLY, AND METHOD FOR ADJUSTING POSITION OF SEMICONDUCTOR OPTICAL AMPLIFIER |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier comprising a GaN-based compound semiconductor and capable of achieving still higher optical output.SOLUTION: A semiconductor optical amplifier 200 is provided with: (a) a layered structure created by sequentially stacking a first compound semiconductor layer comprising a GaN-based compound semiconductor, a third compound semiconductor layer, and a second compound semiconductor layer; (b) a second electrode 262 formed on the second compound semiconductor layer; (c) a first electrode electrically connected to the first compound semiconductor layer. The layered structure has a ridge stripe structure in which, when Wrepresents the width of the ridge stripe structure in a light emission end face 203 and Wrepresents the width of the ridge stripe structure in a light incident end face 201, W>Wis satisfied. In a region inward of the layered structure from the light emission end face 201 along an axial line AXof the semiconductor optical amplifier is provided with a carrier non-injection region 205. The second electrode 262 is configured from a first portion 262A and a second portion 262B separated by a separation groove 262C. The carrier non-injection region 205 is provided with the second portion 262B of the second electrode. |
申请公布号 |
JP2014170958(A) |
申请公布日期 |
2014.09.18 |
申请号 |
JP20140094520 |
申请日期 |
2014.05.01 |
申请人 |
SONY CORP;TOHOKU UNIV |
发明人 |
KURAMOTO MASARU ; IKEDA MASAO ; KODA RINTARO ; OKI TOMOYUKI ; WATANABE HIDEKI ; MIYAJIMA TAKAO ; YOKOYAMA HIROYUKI |
分类号 |
H01S5/50;H01S5/028;H01S5/065;H01S5/22;H01S5/343 |
主分类号 |
H01S5/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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