METHOD OF FORMING THROUGH SUBSTRATE VIAS (TSVS) AND SINGULATING AND RELEASING DIE HAVING THE TSVS FROM A MECHANICAL SUPPORT SUBSTRATE

摘要

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.

主权项

1. A method comprising:
accessing a workpiece object, the workpiece object including a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer, the integrated circuit substrate including a device layer having semiconductor devices; etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop; forming TSVs by introducing one or more conductive materials into the TSV openings; etching a die singulation trench at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die; and at least substantially releasing the integrated circuit die from the mechanical support substrate.