| 发明名称 |
PROBABILITY-BASED REMEDIAL ACTION FOR READ DISTURB EFFECTS |
| 摘要 |
A method may be performed in a data storage device that includes a memory including a three-dimensional (3D) memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line. |
| 申请公布号 |
US2014281685(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414286632 |
申请日期 |
2014.05.23 |
| 申请人 |
Sandisk Technologies Inc. |
发明人 |
YANG NIAN NILES;AVILA CHRIS;SPROUSE STEVEN;MANOHAR ABHIJEET;HUANG YICHAO |
| 分类号 |
G06F11/07 |
主分类号 |
G06F11/07 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
in a data storage device that includes a memory including a three-dimensional (3D) memory and a controller associated with operation of memory cells of the 3D memory, performing, in response to a request to read data from the memory, wherein the data is located within a first word line of the memory: accessing the data from the first word line; and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line. |
| 地址 |
Plano TX US |
