| 发明名称 |
Lithography Process on High Topology Features |
| 摘要 |
A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist. |
| 申请公布号 |
US2014272715(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201314071890 |
申请日期 |
2013.11.05 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Chun-Wei;Lin Hong-Da;Wang Chih-Chien;Chen Chun-Chang;Mo Wang-Pen;Hsieh Hung-Chang |
| 分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first photo resist layer over a base structure and a target feature over the base structure; performing an un-patterned exposure on the first photo resist layer; developing the first photo resist layer, wherein after the step of developing, a corner portion of the first photo resist layer remains at a corner formed between a top surface of the base structure and an edge of the target feature; forming a second photo resist layer over the target feature, the base structure, and the corner portion of the first photo resist layer; exposing the second photo resist layer using a patterned lithography mask; and developing the second photo resist layer to form a patterned photo resist. |
| 地址 |
Hsin-Chu TW |
