ADHESION IMPROVEMENT BETWEEN CVD DIELECTRIC FILM AND CU SUBSTRATE

摘要

Methods of forming dielectric layers on a copper substrate are disclosed herein. In one embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, forming and delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate, forming and delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon and depositing a dielectric layer over the copper compound. In another embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, delivering an adhesion plasma to the copper substrate to form a copper compound and flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound, wherein the flow between the adhesion plasma and the deposition gas is continuous.

主权项

1. A method of depositing a dielectric layer comprising:
positioning a copper substrate in a process chamber; forming a cleaning plasma from a cleaning gas; delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate; forming an adhesion plasma from a compound-forming gas; delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon; and depositing a dielectric layer over the copper compound.