发明名称 MULTI-PLATEN ION IMPLANTER AND METHOD FOR IMPLANTING MULTIPLE SUBSTRATES SIMULTANEOUSLY
摘要 An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.
申请公布号 US2014272178(A1) 申请公布日期 2014.09.18
申请号 US201313798581 申请日期 2013.03.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WANG Shao-Hua;Chen Ming-Te;Lee Sheng-Wei
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
主权项 1. A method for implanting ions into a plurality of substrates, said method comprising: positioning a plurality of substrates on a corresponding plurality of translatable and rotatable platens in an ion implantation chamber of an ion implantation tool; generating an ion beam in said ion implantation tool; directing said ion beam to impinge upon said plurality of substrates in said ion implantation chamber; and implanting each of said plurality of substrates by at least one of translating and rotating said plurality of platens relative to said ion beam, wherein more than one substrate is implanted at the same time during at least a portion of the implanting.
地址 Hsin-chu TW