METHODS FOR FABRICATING INTEGRATED CIRCUITS THAT INCLUDE A SEALED SIDEWALL IN A POROUS LOW-K DIELECTRIC LAYER

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a sidewall in a porous low-k dielectric layer that overlies a semiconductor substrate using a plurality of discontinuous etching treatments. Exposed portions of the sidewall are progressively sealed interposingly between the discontinuous etching treatments to form a sealed sidewall. The sealed sidewall defines a trench in the porous low-k dielectric layer.

主权项

1. A method for fabricating an integrated circuit comprising:
forming a sidewall in a porous low-k dielectric layer that overlies a semiconductor substrate using a plurality of discontinuous etching treatments; and progressively sealing exposed portions of the sidewall interposingly between the discontinuous etching treatments to form a sealed sidewall that defines a trench in the porous low-k dielectric layer.