| 发明名称 |
MONOLITHIC IGNITION INSULATED-GATE BIPOLAR TRANSISTOR |
| 摘要 |
In a general aspect, an apparatus can include an insulated-gate bipolar transistor (IGBT) device disposed in a semiconductor region. The apparatus can further include a plurality of clamping diodes. The plurality of clamping diodes can be coupled in series between a collector terminal of the IGBT device and a gate terminal of the IGBT device. The apparatus can also include a gate pad disposed over at least a portion of the plurality of clamping diodes. The at least a portion of the plurality of clamping diodes can be configured, during operation of the apparatus, to have a voltage of at least 120 V applied across them. |
| 申请公布号 |
US2014264434(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414212682 |
申请日期 |
2014.03.14 |
| 申请人 |
Fairchild Semiconductor Corporation |
发明人 |
YEDINAK Joseph A.;REICHL Dwayne S.;Burton Donald |
| 分类号 |
F23Q3/00;H01L29/739;H01L27/06 |
主分类号 |
F23Q3/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
an insulated-gate bipolar transistor (IGBT) device disposed in a semiconductor region; a plurality of clamping diodes, the plurality of clamping diodes being coupled in series between a collector terminal of the IGBT device and a gate terminal of the IGBT device; a gate pad disposed over at least a portion of the plurality of clamping diodes, the at least a portion of the plurality of clamping diodes being configured, during operation of the apparatus, to have a voltage of at least 120 V applied across them. |
| 地址 |
San Jose CA US |
