SOL-GEL PROCESS FOR THE MANUFACTURE OF HIGH POWER SWITCHES

摘要

According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.

主权项

1. A photoconductive semiconductor switch, comprising:
a structure of nanopowder of a high band gap material, wherein the nanopowder is optically transparent, wherein the nanopowder has a physical characteristic of formation from a sol-gel process.