PACKAGING STRUCTURE OF LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure comprises: an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate with a hole, which is filled with conductive metal; an active layer provided on the n-type layer; a p-type layer formed on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate; an optical element packaged on the base substrate, thereby finishing a device.

主权项

1. A light emitting diode packaging structure, comprising:
an insulating substrate with through holes formed on each side of the upper surface of the insulating substrate, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate and configured to cover most of area of an upper surface of the insulating substrate such that a mesa is formed at one side of the insulating substrate while a hole is provided on the other side in the n-type layer with relative to the mesa, which is fit for the through hole in the insulating substrate and filled with conductive metal; an active layer provided on and at one side of the n-type layer, the area of the active layer being smaller than that of the n-type layer; a p-type layer provided on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer, the p-type electrode being connected with the conductive metal in the through hole in the insulating substrate; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate, thereby the above portions forming a base substrate of a device; an optical element packaged on the base substrate.