DETAPING PROCESS FOR FOILS TAPED ON SEMICONDUCTOR WAFERS

摘要

The invention concerns a detaping process for a protective foil taped onto a front-side of a semiconductor wafer, this detaping process comprising the successive steps of:
A) introducing the wafer and the protective foil taped onto the front-side of the semiconductor wafer into an electrically dissipative liquid or into an electrically dissipative solid-state medium having a flowing behavior substantially similar to the one of a liquid;B) removing the protective foil when the wafer is into the electrically dissipative liquid or into the electrically dissipative solid-state medium.;In another implementing mode, the detaping process comprises, during the removing of the protective foil, a spray of an electrically dissipative liquid in the region adjacent to the detaping line between the semiconductor wafer and the protective foil or an injection of an electrically dissipative liquid along this detaping line.

主权项

1. A detaping process for a protective foil taped onto a front-side of a semiconductor wafer, wherein this detaping process comprises the successive steps of:
A) introducing the semiconductor wafer and the protective foil taped onto the front-side of the semiconductor wafer into an electrically dissipative liquid or into an electrically dissipative solid-state medium having a flowing behavior substantially similar to the one of a liquid; B) removing the protective foil when the semiconductor wafer is into said electrically dissipative liquid or into said electrically dissipative solid-state medium.