A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
申请公布号
WO2014142892(A1)
申请公布日期
2014.09.18
申请号
WO2013US31441
申请日期
2013.03.14
申请人
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY;OOI, BOON, S.
