发明名称 |
METAL INDUCED NANOCRYSTALLIZATION OF AMORPHOUS SEMICONDUCTOR QUANTUM DOTS |
摘要 |
A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semiconductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate. |
申请公布号 |
CA2900449(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
CA20142900449 |
申请日期 |
2014.03.07 |
申请人 |
OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION |
发明人 |
VIDYA DHAR, SINGH;CASSIDY, CATHAL;SOWWAN, MUKHLES IBRAHIM |
分类号 |
H01L21/203;C01B33/02;H01L29/06 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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