METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTENDED GATE DIELECTRIC LAYER

摘要

A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain on the substrate, a gate electrode which is arranged on the substrate between the source and the drain, and a gate dielectric layer which is arranged between the substrate and the gate electrode. At least a part of the gate dielectric layer is extended toward the source or the drain via the gate electrode.