| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of increasing a withstanding voltage without enlarging a size of a semiconductor element, and to provide a development support system supporting a process of deciding a specific resistance value to be set to a semiconductor layer where the semiconductor element is formed, in this manufacturing method.SOLUTION: A method of manufacturing semiconductor device includes steps of: preparing a first substrate (5, 4) configured to have a supporting substrate (1), and a first semiconductor layer (6) formed on the supporting substrate (1) and to which a predetermined first specific resistance value is set; and forming a semiconductor element (10) on the first semiconductor layer (6). The first specific resistance value is set to such a value that is lower than the specific resistance value corresponding to the maximum value of the withstanding voltage of the semiconductor layer and that the withstanding voltage of the semiconductor layer satisfies a desired withstanding voltage condition, by using a plurality information provided depending on a change in the specific resistance value and related to the withstanding voltage of the semiconductor layer decided by the specific resistance value at a predetermined film thickness of a certain semiconductor layer. |
