| 发明名称 |
METHOD OF FORMING HYBRID DIFFUSION BARRIER LAYER AND SEMICONDUCTOR DEVICE THEREOF |
| 摘要 |
In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material. |
| 申请公布号 |
US2014264867(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313833794 |
申请日期 |
2013.03.15 |
| 申请人 |
Taiwan Semiconductor Manufaturing Co., Ltd |
发明人 |
KUO Kai-Shiang;CHANG Ken-Yu;LEE Ya-Lien;SU Hung-Wen |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming an opening inside a dielectric layer over a substrate, the opening having a wall; forming at least one diffusion barrier material over the wall of the opening by at least two alternating steps selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD); and forming a liner layer over the at least one diffusion barrier material. |
| 地址 |
Hsin-Chu TW |
