发明名称 MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
摘要 An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.
申请公布号 US2014264657(A1) 申请公布日期 2014.09.18
申请号 US201414207419 申请日期 2014.03.12
申请人 GOGOI BISHNU PRASANNA 发明人 GOGOI BISHNU PRASANNA
分类号 H01L27/02;H01L29/66;H01L43/12;H01L27/22;H01L27/14;H01L31/18 主分类号 H01L27/02
代理机构 代理人
主权项 1. An integrated circuit having a plurality of sensors comprising: a first sensor configured to measure a first parameter where the first parameter is configured to be directly applied to the sensor. a second sensor configured to measure a second parameter where the second parameter is configured to be indirectly applied to the second sensor where the first and second sensors are formed on a common semiconductor substrate.
地址 SCOTTSDALE AZ US