| 发明名称 |
SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS |
| 摘要 |
Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate. |
| 申请公布号 |
US2014262043(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313798028 |
申请日期 |
2013.03.12 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FRAZIER LARRY;TSAI CHENG-HSIUNG MATTHEW;FORSTER JOHN C.;YEUNG MEI PO;JACKSON MICHAEL S. |
| 分类号 |
H01L21/683 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate support to support a substrate in a processing chamber, comprising:
a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate. |
| 地址 |
Santa Clara CA US |
