发明名称 Unlocking Layer and Method
摘要 A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a polymer resin which has repeating units within it. At least one of the repeating units comprises a locked unit which has a cyclic structure and a lock within the unit. After the anti-reflective layer has been applied and baked, irregularities such as voids and step heights differences that have occurred may be handled by unlocking the lock within the locked unit. This unlocking breaks the cyclic structure, allowing the polymer to take up more volume and causing the anti-reflective layer to self-expand, filling the voids and reducing the step-height. The unlocking may be performed by exposure or thermal treatments.
申请公布号 US2014273506(A1) 申请公布日期 2014.09.18
申请号 US201313927984 申请日期 2013.06.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liu Chen-Yu;Chang Ching-Yu
分类号 C09D5/00;H01L21/02 主分类号 C09D5/00
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device, the method comprising: applying an anti-reflective coating layer onto a substrate, the anti-reflective coating layer comprising a resin with a locked monomer; and expanding a volume of the anti-reflective coating layer by unlocking the locked monomer.
地址 Hsin-Chu TW
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