| 发明名称 |
METHODS OF FORMING FINFET DEVICES WITH A SHARED GATE STRUCTURE |
| 摘要 |
In one example, the method disclosed herein includes forming a shared sacrificial gate structure above at least one first fin for a first type of FinFET device and at least one second fin for a second type of FinFET device, wherein the second type is opposite to the first type, and forming a first sidewall spacer around an entire perimeter of the sacrificial gate structure in a single process operation. |
| 申请公布号 |
US2014273429(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313797117 |
申请日期 |
2013.03.12 |
| 申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Wei Andy C.;Yang Dae Geun |
| 分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a shared sacrificial gate structure above at least one first fin for a first type of FinFET device and at least one second fin for a second type of FinFET device, said second type being opposite to said first type; and forming a first sidewall spacer around an entire perimeter of said sacrificial gate structure in a single process operation. |
| 地址 |
Grand Cayman KY |
