| 摘要 |
<p>Disclosed is a method for preparing a crystalline silicon solar cell. The method comprises the following steps: (1) cleaning the surface of a silicon slice, and performing texturing, diffusion, junction making and edge etching on the surface of the silicon slice; (2) forming a layer of silicon dioxide dielectric film on a light-receiving surface or a double surfaces of the silicon slice, the thickness of the layer of silicon dioxide dielectric film is 1.0 to 10 nm; and (3) performing antireflective film coating, silk-screen printing and sintering to obtain the crystalline silicon solar cell. In this way, a method for preparing a crystalline silicon solar cell resisting potential induced degradation is developed. The formed silicon dioxide dielectric film well blocks ion migration, prevents the ion migration from damaging a PN junction and effectively restrains a PID effect and can meet requirements on a PID Free cell plate.</p> |
