Shielding for Through-Silicon-Via

摘要

3D integrated circuit devices include first and second semiconductor bodies. The first semiconductor body has an active area, a through-silicon-via outside the active area, and two or more disjoint guard rings. The first guard ring encircles the via. The second guard ring encircles the active area, but not the via. The guard rings can reduce the noise coupling coefficient between the via and the active area to −60 dB or less at 3 GHz and 20 μm spacing.

主权项

1. An integrated circuit device, comprising:
a semiconductor body; an active area of the body; a via penetrating through the semiconductor body, the via being outside the active area; a first contiguous region throughout which the semiconductor body is p-doped to a first concentration, the first contiguous region surrounding the active area, but not the via; and a second contiguous region throughout which the semiconductor body is p-doped to the first concentration, the second region surrounding the via, the second region being disjoint from the first region; wherein the semiconductor body is not p-doped or is p-doped to a second concentration that is less than the first concentration.