Method and Structure for Nitrogen-Doped Shallow-Trench Isolation Dielectric

摘要

An isolation feature with a nitrogen-doped fill dielectric and a method of forming the isolation feature are disclosed. In an exemplary embodiment, the method of forming the isolation feature comprises receiving a substrate having a top surface. A recess is etched in the substrate, the recess extending from the top surface into the substrate. A dielectric is deposited within the recess such that the depositing of the dielectric includes introducing nitrogen during a chemical vapor deposition process. Accordingly, the deposited dielectric includes a nitrogen-doped dielectric. The deposited dielectric may include a nitrogen-doped silicon oxide. In some embodiments, the depositing of the dielectric disposes the nitrogen-doped dielectric in contact with a surface of the recess. In further embodiments, a liner material is deposited within the recess prior to the depositing of the dielectric within the recess.

主权项

1. A method of forming an isolation feature, the method comprising:
receiving a substrate having a top surface; etching a recess in the substrate, the recess extending from the top surface into the substrate; and depositing a dielectric within the recess, wherein the depositing of the dielectric includes introducing nitrogen during a chemical vapor deposition process, whereby the deposited dielectric includes a nitrogen-doped dielectric.