| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICES |
| 摘要 |
Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer. |
| 申请公布号 |
US2014264382(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414208784 |
申请日期 |
2014.03.13 |
| 申请人 |
Global Power Device Company |
发明人 |
MacMillan Michael;Chakrabarti Utpal K. |
| 分类号 |
H01L29/16;H01L21/02 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a silicon carbide (SiC) semiconductor device, comprising:
forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate; and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer to at least partially consume the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer. |
| 地址 |
Lake Forest CA US |
