| 发明名称 |
CARBON DOPING SEMICONDUCTOR DEVICES |
| 摘要 |
A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm−3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm−2. |
| 申请公布号 |
US2014264370(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414208304 |
申请日期 |
2014.03.13 |
| 申请人 |
Transphorm Inc. |
发明人 |
Keller Stacia;Swenson Brian L.;Fichtenbaum Nicholas |
| 分类号 |
H01L29/778;H01L29/66;H01L29/20;H01L21/02 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
forming a III-N semiconductor layer on a substrate in a reactor; and while forming the III-N semiconductor layer, injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. |
| 地址 |
Goleta CA US |
