Strained InGaAs Quantum Wells for Complementary Transistors

摘要

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

主权项

1. A complementary semiconductor heterostructure, comprising:
an InxGa1-xAs n-channel and an antimonide p-channel, the n-channel and p-channel having a lattice mismatch which produces a strain between the n- and p-channels; and a buffer layer common to the n- and p-channels, the buffer layer having a lattice constant intermediate a lattice constant of the InGaAs n-channel and a lattice constant of the antimonide p-channel; wherein the buffer layer is configured to accommodate the strain produced by a lattice-constant mismatch between the n- and p-channels.