| 摘要 |
A sidewall-type memory cell (e.g., a CBRAM, ReRAM, or PCM cell) may include a bottom electrode, a top electrode layer defining a sidewall, and an electrolyte layer arranged between the bottom and top electrode layers, such that a conductive path is defined between the bottom electrode and a the top electrode sidewall via the electrolyte layer, wherein the bottom electrode layer extends generally horizontally with respect to a horizontal substrate, and the top electrode sidewall extends non-horizontally with respect to the horizontal substrate, such that when a positive bias-voltage is applied to the cell, a conductive path grows in a non-vertical direction (e.g., a generally horizontal direction or other non-vertical direction) between the bottom electrode and the top electrode sidewall. |
