NONVOLATILE MEMORY DEVICE AND DATA WRITE METHOD

摘要

A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.

主权项

1. A data write method for a nonvolatile memory device, the method comprising:
receiving externally provided write data to be stored in selected memory cells during a write operation; reading previous data previously stored in the selected memory cells; modulating the write data to generate modulated write data; counting a first number of flip bits and a first number of switching bits that result when the previous data is overwritten by the write data, and counting a second number of flip bits and a second number of switching bits that result when the previous data is overwritten by the modulated write data; selecting one of the write data and the modulated write data to be selected data based on the first number of flip bits, the first number of switching bits, the second number of flip bits, and the second number of switching bits; and writing the selected data to the selected memory cells.