| 发明名称 |
SILICON-NITRIDE-CONTAINING INTERLAYER OF GREAT HARDNESS |
| 摘要 |
The invention relates to a shaped body comprising a substrate with a firmly adhering separating layer, wherein the separating layer comprises 92-98 wt. % silicon nitride (Si3N4) and 2-8 wt. % silicon dioxide (SiO2) and wherein the separating layer has a total oxygen content of ≦8 wt. % and a hardness of at least 10 HB 2.5/3 according to DIN EN ISO 6506-1.;The invention further relates to a process for producing such a shaped body, a coating suspension for use in such a process and the use of a shaped body according to the invention in the field of corrosive nonferrous metal melts. |
| 申请公布号 |
US2014272748(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201214342001 |
申请日期 |
2012.08.02 |
| 申请人 |
Uibel Krishna;Worthey David W. |
发明人 |
Uibel Krishna;Worthey David W. |
| 分类号 |
F27B14/10 |
主分类号 |
F27B14/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. Shaped body comprising a substrate with a firmly adhering separating layer, wherein the separating layer comprises 92-98 wt. % silicon nitride (Si3N4) and 2-8 wt. % silicon dioxide (SiO2) and wherein the separating layer has a total oxygen content of ≧8 wt. % and a hardness of at least 10 HB 2.5/3 according to DIN EN ISO 6506-1. |
| 地址 |
Waltenhofen DE |
