| 发明名称 |
DRAM WITH PULSED SENSE AMP |
| 摘要 |
Disclosed is a pulsed sense amplifier approach for resolving data on a bit line. |
| 申请公布号 |
US2014269009(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313839174 |
申请日期 |
2013.03.15 |
| 申请人 |
Ghosh Swaroop;Meterelliyoz Mesut;Hamzaoglu Faith;Wang Yih;Zhang Kevin X. |
发明人 |
Ghosh Swaroop;Meterelliyoz Mesut;Hamzaoglu Faith;Wang Yih;Zhang Kevin X. |
| 分类号 |
G11C11/4091 |
主分类号 |
G11C11/4091 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chip, comprising:
a sense amplifier coupled to first and second DRAM bitlines; and a circuit having a trigger node coupled to the sense amp to transition it from a first state to a second state to trigger the sense amp, the circuit having an element to impede the transition once it is initiated. |
| 地址 |
Hillsboro OR US |
