| 摘要 |
A transition (100, 300) from microstrip to waveguide, the waveguide comprising first (120) and second (105, 105′, 105″) interior surfaces connected by side walls (115, 116) whose height (h1, h2, h3) is the shortest distance between said interior surfaces, and a microstrip structure (130, 135, 110) extending into the closed waveguide (105). The microstrip structure comprises a microstrip conductor (130, 135) on a dielectric layer arranged on said first interior surface. The microstrip conductor (130,135) comprises and is terminated inside the closed waveguide by a patch (135). The height (h1) of the side walls (115, 116) along the distance that the microstrip conductor (130, 135) extends into the closed waveguide (105) being less than half of the greatest height (h3) beyond the microstrip structure's protrusion into the closed waveguide (105). |
