发明名称 |
INTERLAYER CONDUCTOR STRUCTURE AND METHOD |
摘要 |
To form an interconnect conductor structure, a stack of pads, coupled to respective active layers of a circuit, is formed. Rows of interlayer conductors are formed to extend in an X direction in contact with landing areas on corresponding pads in the stack. Adjacent rows are separated from one another in a Y direction generally perpendicular to the X direction. The interlayer conductors in a row have a first pitch in the X direction. The interlayer conductors in adjacent rows are offset in the X direction by an amount less than the first pitch. Interconnect conductors are formed over and in contact with interlayer conductors. The interconnect conductors extend in the Y direction and have a second pitch less than the first pitch. |
申请公布号 |
US2014264934(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201314045573 |
申请日期 |
2013.10.03 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Chen Shih-Hung |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming an interconnect conductor structure, comprising:
forming a stack of pads coupled to respective active layers of a circuit; forming interlayer conductors arranged in rows extending in an X direction in contact with landing areas on corresponding pads in the stack, adjacent rows being separated from one another in a Y direction generally perpendicular to the X direction, the interlayer conductors in a row having a first pitch in the X direction, and the interlayer conductors in adjacent rows being offset in the X direction by an amount less than the first pitch; and forming interconnect conductors over and in contact with interlayer conductors, the interconnect conductors extending in the Y direction and having a second pitch less than the first pitch. |
地址 |
Hsinchu TW |