发明名称 |
Interconnect Structure for Stacked Device |
摘要 |
A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers. |
申请公布号 |
US2014264929(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313937055 |
申请日期 |
2013.07.08 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Shu-Ting;Lin Jeng-Shyan;Yaung Dun-Nian;Liu Jen-Cheng;Hung Feng-Chi;Huang Chih-Hui;Chen Sheng-Chau;Chou Shih-Pei;Lin Chia-Chieh |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a first semiconductor element comprising:
a first substrate;a dielectric block in the first substrate; anda plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. a second semiconductor element bonded to the first semiconductor element, wherein the second semiconductor element comprises:
a second substrate; anda plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features and isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers, the conductive deep-interconnection-plug comprises:
an upper portion formed in the dielectric block and the first inter-metal-dielectric layers, wherein the upper portion is of a first width; anda lower portion formed in the first and second inter-metal-dielectric layers, wherein the lower portion is of a second width less than the first width. |
地址 |
Hsin-Chu TW |