发明名称 Interconnect Structure for Stacked Device
摘要 A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.
申请公布号 US2014264929(A1) 申请公布日期 2014.09.18
申请号 US201313937055 申请日期 2013.07.08
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Shu-Ting;Lin Jeng-Shyan;Yaung Dun-Nian;Liu Jen-Cheng;Hung Feng-Chi;Huang Chih-Hui;Chen Sheng-Chau;Chou Shih-Pei;Lin Chia-Chieh
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项 1. A device comprising: a first semiconductor element comprising: a first substrate;a dielectric block in the first substrate; anda plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. a second semiconductor element bonded to the first semiconductor element, wherein the second semiconductor element comprises: a second substrate; anda plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features and isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers, the conductive deep-interconnection-plug comprises: an upper portion formed in the dielectric block and the first inter-metal-dielectric layers, wherein the upper portion is of a first width; anda lower portion formed in the first and second inter-metal-dielectric layers, wherein the lower portion is of a second width less than the first width.
地址 Hsin-Chu TW